Platen For Reducing Particle Contamination On A Substrate And A Method Thereof

ABSTRACT

Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

PRIORITY

This application is a divisional application of U.S. Non-provisionalpatent application Ser. No. 12/487,444, filed on Jun. 18, 2009, entitled“Platen ground pin for connecting substrate to ground,” and now patentedas U.S. Pat. No. 8,681,472, which claims priority to U.S. ProvisionalPatent Application Ser. No. 61/074,169, filed on Jun. 20, 2008, entitled“An Apparatus for reducing particle contamination and a method thereof.”The entire specification of U.S. Provisional Application 61/074,169 andthe entire specification of U.S. Non-provisional patent application Ser.No. 12/487,444 are incorporated herein by reference.

FIELD

The present disclosure relates to a platen an apparatus for supporting asubstrate and, more particularly, to a platen for reducing particlecontamination during processing of the substrate and a method thereof.

BACKGROUND

Ion implantation or doping is one of several processes performed for,among others, manufacturing electronic devices. As known in the art, abeam-line ion implantation system may be used to perform ionimplantation. A block diagram of a conventional ion implanter is shownin FIG. 1. The conventional ion implantation system 100 may comprise anion source 104; a plurality of beam-line components; and an end station.As known in the art, the ion source 104 may be used to generate ions ofdesired species 102. The generated ions may be extracted from the ionsource 104 by the beam-line components 105. Much like a series ofoptical lenses that manipulate a light beam, the beam-line components105 manipulate the ions 102 into an ion beam 102 and steer the beam 102towards an end station 110 where a wafer 106 and a platen 108 supportingthe wafer 106 are located. The ion beam directed toward the end stationis incident on the wafer 106 and ion implantation may be performed.

The ion implantation may also be performed using a system known as aplasma doping (“PLAD”) or plasma immersion ion implantation (“PIII”)system. In the PLAD system, the wafer 106 and the platen 108 supportingthe wafer 106 are placed in a process chamber. Meanwhile, process gascontaining a desired species is into a plasma source of PLAD system 200.In some systems, the plasma source is adjacent to the process chamber.In other systems, the plasma source is removed and remote from theprocess chamber. The process gas is then converted into plasma 210containing electrons, ions 202 of the desired species, neutrals, and/orresiduals. The wafer 106 may be biased, and ions 202 of the desiredspecies may be implanted into the wafer 106.

The platen 108 may be used to support the wafer 106 during ionimplantation. The platen 108 may comprise a plurality of electrodes (notshown) that electrostatically clamp the wafer 106 to the platen 108. Insome cases, platen 108 may enable the wafer 106 to move in severaldirections (e.g. translate, rotate, tilt, etc. . . . ).

The platen 108 may be used to control several ion implantationparameters. For example, the platen 108 may be used to maintain thetemperature of the wafer 106 at a desired level. Because the ionimplantation process is an energetic process, temperature of the wafer106 may be elevated to a level beyond that is desired. Generally, theplaten 108 is used to prevent overheating of the substrate. Theconventional platen may have a cooling recess (not shown) which, alongwith the mounted wafer 106, may define a cooling region (not shown).Cooling gas may be introduced into the cooling region and maintained ata predetermined pressure such that the gas may contact the wafer 106 andcool the wafer 106.

Another implant parameter that can be controlled using the platen 108includes preventing excessive charge buildup in the wafer 106. As knownin the art, excessive charge may build up in the wafer 106 as the wafer106 is bombarded with charged ions. Excessive charge buildup may causearcing and lead to catastrophic failure of the wafer 106. In addition,the charge buildup may hinder the wafer 106 from being de-clamped fromthe platen 108 after completion of the ion implantation process. Toavoid excess charge buildup, the wafer 106 and 206 may contain one ormore ground circuits (not shown) that electrically connects the wafer106 to the ground and reduce excessive charge buildup.

In the conventional platen 108, parts of the platen 108 directly contactthe wafer 106. Such contacts may generate debris. The debris may driftto the front side of the wafer 106, the side on which the ion beam isincident. Debris near the front side of wafer 106 may be disadvantageousas the debris may interfere with the implantation process and,ultimately, contribute to less than optimum devices. Accordingly, animproved platen is needed.

SUMMARY

Techniques for reducing particle contamination on a substrate aredisclosed. In one particular exemplary embodiment, the technique may berealized with a platen having different regions, where the pressurelevels in the regions may be substantially equal. For example, the aplaten may comprise a platen body comprising first and second recesses,the first recess defining a fluid region for holding fluid formaintaining a temperature of the substrate at a desired temperature, thesecond recess defining a first cavity for holding a ground circuit; afirst via defined in the platen body, the first via having first andsecond openings, the first opening proximate to the fluid region and thesecond opening proximate to the first cavity, wherein pressure level ofthe fluid region may be maintained at a level that is substantiallyequal to pressure level of the first cavity.

In accordance to another aspect of this particular exemplary embodiment,the fluid region may be in pressure equilibrium with the first cavity.

In accordance to further aspect of this particular exemplary embodiment,the fluid region may be in fluid communication with the first cavity.

In accordance with additional aspect of this particular exemplaryembodiment, the platen may further comprise a fluid channel, where thefluid region may be in fluid communication with the first cavity throughthe fluid channel.

In accordance with yet additional aspect of this particular exemplaryembodiment, the fluid channel may be provided in the platen body.

In accordance with yet another aspect of this particular exemplaryembodiment, the fluid channel may be provided in the ground circuit.

In accordance with still another aspect of this particular exemplaryembodiment, the ground circuit may comprise a ground pin having a pinbody and a sleeve, and the fluid channel may be provided in the sleeve.

In accordance with another aspect of this particular exemplaryembodiment, the ground circuit may comprise a ground pin having a pinbody and a sleeve, where the fluid channel may be provided in the pinbody.

Yet in accordance with another aspect of this particular exemplaryembodiment, the ground circuit may comprise a ground pin having a pinbody and a porous sleeve, where the fluid channel may be provided in theporous sleeve

In accordance to another aspect of this particular exemplary embodiment,the fluid channel may be in a form of a groove.

Still in accordance to another aspect of this particular exemplaryembodiment, the ground circuit may comprise a ground pin having a pinbody and a sleeve, where the fluid channel may be in a form of a groove,and where the groove may be provided in the sleeve.

In accordance to additional aspect of this particular exemplaryembodiment, the groove may extend in one direction.

In accordance to still another aspect of this particular exemplaryembodiment, the groove may be a helical groove.

In another particular exemplary embodiment, a ground pin for connectinga substrate to ground may comprise a pin body; and a sleeve supportingthe pin body, where the sleeve may include a fluid channel for whichfluid may be transported.

In accordance to another aspect of this particular exemplary embodiment,the fluid channel may be in a form of a groove disposed on at least oneof outer and inner surfaces of the sleeve.

In accordance to additional aspect of this particular exemplaryembodiment, the fluid channel may be in a form of a via disposed betweenouter and inner surfaces of the sleeve.

Yet in accordance to another particular aspect of this particularexemplary embodiment, the groove is a helical groove.

Yet in accordance to additional particular exemplary embodiment, thetechnique may be realized by loading the substrate on a platen;introducing fluid to a fluid region adjacent to the substrate and aplaten body of the platen; maintaining the fluid region at a firstpressure level; and maintaining a first cavity defined by the platenbody at a second pressure level, the second pressure level beingsubstantially equal to the first pressure level.

In accordance to another aspect of this particular exemplary embodiment,the technique may further comprise providing a fluid channel, whereinthe fluid region is in fluid communication with the first cavity throughthe fluid channel.

Yet in another aspect of this particular exemplary embodiment the platenmay comprise a platen body, where the fluid region and the first cavitymay be spaced apart by the platen body, and where the fluid channel maybe provided in the platen body.

In accordance to additional aspect of this particular exemplaryembodiment, the technique may further comprise providing a ground pinfor connecting the substrate to ground, where the fluid channel may beprovided in the ground pin.

In accordance to yet additional aspect of this particular exemplaryembodiment, the ground pin may further comprise a pin body and a sleeve,wherein the fluid channel may be provided in the sleeve.

In accordance to still additional aspect of this particular exemplaryembodiment, the fluid channel may be in a form of a groove disposed onouter surface of the sleeve.

In accordance to still another aspect of this particular exemplaryembodiment, the groove may be a helical groove.

The present disclosure will now be described in more detail withreference to exemplary embodiments thereof as shown in the accompanyingdrawings. While the present disclosure is described below with referenceto exemplary embodiments, it should be understood that the presentdisclosure is not limited thereto. Those of ordinary skill in the arthaving access to the teachings herein will recognize additionalimplementations, modifications, and embodiments, as well as other fieldsof use, which are within the scope of the present disclosure asdescribed herein, and with respect to which the present disclosure maybe of significant utility.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to facilitate a fuller understanding of the present disclosure,reference is now made to the accompanying drawings. These figures maynot necessarily be drawn to scale. In addition, these figures should notbe construed as limiting the present disclosure, but are intended to beexemplary only.

FIG. 1 is a block diagram illustrating a conventional beam-line ionimplantation system.

FIG. 2 is a block diagram illustrating a conventional PLAD or PIIIsystem.

FIG. 3A is a block diagram illustrating a platen comprising one or moreground circuits according to one embodiment of the present disclosure.

FIG. 3B is a detailed view of the platen near the ground circuitaccording to one embodiment of the present disclosure.

FIG. 4 is a cross sectional view of a platen for reducing particlecontamination according to one embodiment of the present disclosure.

FIG. 5 is a cross sectional view of a platen for reducing particlecontamination according to another embodiment of the present disclosure.

FIG. 6A-6D are views of several exemplary ground pins that can beincorporated into the platens illustrated in FIG. 3-5 according toseveral embodiments of the present disclosure.

FIGS. 7A and 7B are views of another exemplary ground pin that can beincorporated into the platens illustrated in FIG. 3-5 according toanother embodiment of the present disclosure.

FIG. 8 is a view of another exemplary ground pin that can beincorporated into the platens illustrated in FIG. 3-5 according toanother embodiment of the present disclosure

The present disclosure will now be described in more detail withreference to exemplary embodiments thereof as shown in the accompanyingdrawings. While the present disclosure is described below with referenceto exemplary embodiments, it should be understood that the presentdisclosure is not limited thereto. Those of ordinary skill in the arthaving access to the teachings herein will recognize additionalimplementations, modifications, and embodiments, as well as other fieldsof use, which are within the scope of the present disclosure asdescribed herein, and with respect to which the present disclosure maybe of significant utility.

DESCRIPTION

To solve aforementioned problems, several embodiments of a platen forreducing particle contamination while processing a substrate and amethod thereof are introduced. For purpose of clarity and simplicity,the present disclosure focuses on a platen, and components thereof,implemented in an ion implantation system. However, those skilled in theart will recognize that the present disclosure may be equally applicableto other systems, and components thereof. For example, the presentdisclosure may be equally applicable to other types of substratesupport, and components thereof, in an etch system, a deposition system,an annealing system, or other optical based processing systems. Inaddition, the present disclosure is made in context to a term“substrate.” Those of ordinary skill in the art will recognize that thesubstrate may contain a metal, a semiconductor, an insulator, or acombination thereof.

Referring to FIG. 3 a, there is shown a cross sectional view of a platenfor reducing particle contamination on a substrate, according to oneembodiment of the present disclosure. The platen in the presentembodiment may be a platen 300 supporting the substrate 302 duringvarious processes. The platen 300 may be made from an electricallyconducting material such as, for example, aluminum (“Al”). However, itis also contemplated that the platen 300 may be made from otherelectrical conducting materials. The platen 300 made from an insulator,although not desirable, is, however, not precluded.

As illustrated in FIG. 3 a, the platen 300 may comprise a platen body301 and one or more ground circuits 330 electrically coupling thesubstrate 302 to the ground. The platen body 301 comprises a firstrecess defining one or more fluid regions 310. The fluid region 310 maycontain fluid to maintain a substrate 302 at a desired temperature. Forexample, if it is desirable to maintain the substrate 302 at a lowtemperature, cooling fluid may be introduced to the fluid region 310 tocool the substrate 302 while the substrate 302 is being processed. Onthe other hand, if it is desirable to maintain the substrate 302 at ahigh temperature, heating fluid may be introduced to the fluid region310 to heat the substrate 302.

Referring to FIG. 3 b, there is shown a more detailed view of the platenbody 301 proximate to the ground circuit 330. In addition to the firstrecess defining the fluid region, the platen body 301 may also comprisea second recess defining a first cavity 312, and first and second vias314 and 316 coupling the fluid region 310 and the first cavity 312. Theground circuit 330, meanwhile, may comprise a ground electrode 334 and aground pin 332, where the ground pin has a pin body 332 a and a sleeve332 b. As illustrated in the figure, the ground electrode 334 and thesleeve 332 b is disposed in the first cavity 312. Meanwhile, the pinbody 332 a may extend from the first cavity 312 to the fluid region 310through the first via 314.

In the present disclosure, the pin body 332 a may preferably have asharp end to penetrate a dielectric film 302 a generally deposited onthe back side of the substrate 302, to contact the substrate 302. Toprovide electrical contact, the pin body 332 a of the present disclosuremay be made with one or more electrically conducting materials, forexample, tungsten carbide (“WC”). The sleeve 332 b, meanwhile, may beelectrically insulating. The sleeve 332 b may preferably comprise one ormore insulating or dielectric materials including, for example, rubber,polymer, and dielectric ceramic, or a combination thereof. Although thesleeve 336 may preferably be insulating, sleeve 336 that can conductelectricity is also contemplated in the present disclosure.

As illustrated in FIG. 3 b, the sleeve 332 b may be positioned on thepin body 332 a. In addition, the sleeve 332 b may be in contact with theplaten body 301 near the opening of the first via 314. The sleeve 332 bmay be shaped and dimensioned to provide support to the pin body 332 aand prevent the pin body 332 a from protruding excessively into thefluid region 310. For example, the cross sectional dimension (i.e. thedistance between the center to the outer periphery) of the sleeve 332 bmay be greater than the cross sectional dimension of the first via 314.Excessive protrusion in the fluid region 310 may damage the substrate.

To provide ground to the substrate, the ground electrode 332 is coupledto the ground pin 332. The ground electrode 334 may preferably enablethe ground pin 332 to move in a vertical direction. To achieveelectrical conductivity and vertical movement, the ground electrode 334may have a spring board configuration. One end of the ground electrode334 may supported, whereas the other end of the ground electrode 334,the end in contact with the ground pin 332, may be without a support.However, support may be provided to the end in contact with the groundpin 332. In addition, the ground electrode 334 may comprise one or moreflexible, electrically conducting material. For example, the groundelectrode 340 may be made with a material such as, for example, copper(“Cu”). Those of ordinary skill in the art will recognize that theground electrodes 334 with other configurations and other materials arealso possible. For example, it is also within the present disclosurethat the ground electrode 334 may have a helical coil configurationand/or made from an alloy, such as Be—Cu alloy, or, if preferable, acomposite. The electrode 334 may also be made from a shape memory alloycapable of recovering its original shape after deformation induced bystress.

In operation, the substrate 302 is loaded onto the platen 300, clamped,and processed. The platen 300 may be an electrostatic clamping platen300, and one or more clamping electrodes (not shown) may be activated toclamp the substrate 302 to the platen 300. Alternatively, the platen 300may be a mechanical clamping platen 300, and the substrate 302 may bemechanically clamped to the platen 300. The ground pin 332 is thenpressed against the substrate 302, penetrates the dielectric film 302 a,and intimately contacts the substrate 302.

To maintain the substrate at a desired temperature, fluid may beintroduced to the fluid region 310. As noted above, fluid may beintroduced to provide cooling or heating. In addition, fluid ismaintained in the fluid region 310 at a desired pressure level or withina range of a desired pressure range P_(C). After the substrate isprocessed, the substrate 302 may be declamped from the platen 300 andremoved from the platen 300.

While the substrate is mounted onto the platen 300, debris may begenerated as the parts of the platen 300 and the substrate 302 directlycontact one another. For example, debris from the substrate 302 and thefilm 302 a may be generated as the substrate 302 and the film 302 aintimately contact the sharp end of the pin body 332 a. Generated debrismay settle and accumulate on the surface of the platen body 301, the pinbody 332 a, the sleeve 332 b, the first cavity 312, and the first via314. The inventors discovered that such debris may be transported toother location of the end station or toward the front side of thesubstrate 302. The problem is exacerbated by one or more of suddenbursts of fluid flow between, for example, the fluid region 310 and thefirst cavity 312. One or more fluid bursts may disturb the debrissettled on various surfaces, provide momentum, and transport the debrisnear the front side of the substrate 302.

The inventors discovered that the fluid bursts may be attributable topressure differential between the fluid region 310 and the first cavity312. During operation, the fluid region 310 may be maintained at thedesired pressure level P_(C), whereas the first cavity 312 is maintainedat another pressure level P₁ different from P_(C). The inventorsdiscovered that intermittently, the sleeve 322 b is separated from theplaten body 301 by a vertical movement induced to the ground pin 332when the pin body 332 a is in contact with the substrate 302 or film 302a. In the process, the first via 314, which is generally obstructed bythe sleeve 332 b, is unobstructed. A sudden burst of fluid may flowbetween the fluid region 310 and the first cavity 312 due to thedifference in P_(C) and P₁.

In the present embodiment, the platen body 301 may comprise the secondvia 316 that is in fluid communication with the fluid region 310 and thefirst cavity 312. The second via 316 may provide a fluid channel towhich fluid may flow from two regions 310 and 312. In the process,pressure equilibrium between the regions 310 and 312 may be achieved andmaintained. For example, fluid from one of the regions 310 and 312 undergreater pressure level may flow through the second via 316 to the otherone of the regions 310 and 312. In the process, the pressure levels attwo regions 310 and 312 may be equal or substantially equal and pressuredifferential between two regions may be minimized. Even if the sleeve332 b is separated from the platen body 301, thus opening the first via314, sudden flow of fluid between two regions 310 and 312 may beavoided. The debris settled on various surfaces will less likely to bedisturbed and transported near the substrate 302. Those of ordinaryskill in the art will recognize that the present disclosure is equallyapplicable to achieving pressure equilibrium in other regions of theplaten that are intermittently in fluid communication with anotherregion and sudden bursts of fluid flows between the regions.

Referring to FIG. 4, there is shown a cross sectional view of a platen400 for reducing particle contamination on a substrate, according toanother embodiment of the present disclosure. The platen 400 of thepresent embodiment is similar to the platen 300 shown in FIG. 3. Forpurpose of clarity and simplicity, detailed description of similarfeatures is not provided. In addition, same reference numbers are usedto refer similar parts.

In the present embodiment, the platen 400 may optionally omit the secondvia 316 included in the platen body 301 of the earlier embodiment. Theplaten body 401 of the present embodiment may include a fluid port 418positioned in the first cavity 312 to minimize pressure differentialbetween the fluid region 310 and the first cavity 312. The fluid port418 may be coupled to a fluid source (not shown) and/or a vacuum pump(not shown). Further, a pressure monitor (not shown) capable ofdetermining pressure differential between the first cavity 312 and thefluid region 310 may be provided. If the pressure levels in the fluidregion 310 and the first cavity 312 are different, fluid may be providedto or evacuated from the first cavity 312 to minimize the pressuredifferential between the regions 310 and 312.

Referring to FIG. 5, there is shown a cross sectional view of a platen500 for reducing particle contamination on a substrate, according toanother embodiment of the present disclosure. The platen 500 of thepresent embodiment is similar to the systems 300 and 400 shown in FIGS.3 and 4. In the present embodiment, the platen 500 may comprise a platenbody 501 which may optionally omit the second cavity 316 and/or a fluidport 318 described in earlier embodiments. For purpose of clarity andsimplicity, detailed description of similar features is not provided. Inaddition, same reference numbers are used to refer similar components.

In the present embodiment, the platen 500 may comprise a ground circuit530. The ground circuit 500 may comprise a ground electrode 534 and aground pin 532, where the ground pin 532 includes a pin body 532 a and asleeve 532 b. The pin body 532 a and the ground electrode 534 may besimilar to those described in earlier embodiments. For purpose ofclarity, a description of similar features will not be included.

In the present embodiment, the sleeve 532 b may be a porous sleeve 532b. The pores in the sleeve 532 b of the present embodiment may have aplurality of fluid channels that couple the fluid region 310 and thefirst cavity 312. The channels in the porous sleeve 532 b may allowfluid in the fluid region 310 to flow to the first cavity 312, or viceversa. Those of ordinary skill in the art will recognize that sleeve 532b, although porous, is capable of maintaining its structure toadequately support the pin body 532 a.

By providing the ground pin 532 with a porous sleeve 532 b, the pressureequilibrium between the fluid region 310 and the first cavity 312 may beachieved. In addition, sudden bursts of fluid flow between two regions310 and 312 that may disturb and/or distribute the debris may beminimized or avoided. The platen 500 utilizing the ground pin 532 of thepresent embodiment may have additional advantages. For example, if thefluid channels in the sleeve 532 b become obstructed due to heavy use,the ground pin 532 may be replaced with another ground pin 532. Theentire platen 500 may need not be replaced or refurbished. Accordingly,maintaining the platen 500 may be much easier and less costly.

Those of ordinary skill in the art will recognize that the ground pin ofthe present disclosure may have various configurations. Among others,the shape, dimension, and the material of the sleeve of the ground pinmay be chosen to adequately support the pin body and to maintain itsstructure. For example, the sleeve may have a portion with the crosssectional dimension greater than the cross sectional dimension of thefirst via 314. In the process, the sleeve may prevent the pin body fromexcessively protruding into the fluid region 310 or excessivelyimpinging on the substrate 302.

In addition, the ground pin may comprise a fluid channel that is incommunication with the fluid region 310 and the first cavity 312, eitherdirectly or indirectly through another component (e.g. the first via).The fluid channel may be in a form of a groove or a via. The fluidchannel, in the form of a groove or a via, may be disposed on the pinbody or the sleeve of the ground pin. For example, the fluid channel, inthe form of a groove or a via, may be disposed on the sleeve, near theouter surface; within the sleeve; on the sleeve, near the inner surface;on the pin body, near the outer edge of the pin body; and/or within thepin body. The fluid channel of the ground pin may provide pressureequilibrium between the fluid region 310 and the first cavity 312 tominimize the pressure differential, when the ground pin is disposed onthe platen body. Hereinafter, several exemplary ground pins which may beincorporated to the platen illustrated in FIGS. 3, 4, and 5 are shown.

Referring to FIG. 6A-6D, there are shown several exemplary ground pinsthat may be incorporated into the platen of the present disclosure. Asillustrated in FIG. 6A, the ground pin 632 may comprise a pin body 632a, a sleeve 632 b, and a fluid channel 632 c. In the present embodiment,the fluid channel 632 c, in a form of a groove 632 c, may be disposed onthe sleeve 632 b, near the outer surface of the sleeve 632 b. However,those of ordinary skill in the art will recognize that the fluid channel632 c may also be in a form of a via. In addition, those of ordinaryskill in the art will also recognize that the fluid channel 632 c, inthe form of a groove or via, may also be disposed within the sleeve 632b, on the inner surface of the sleeve 632, on the outer surface of thepin body 632 a, or within the pin body 632 a. Further, those of ordinaryskill in the art will recognize that the fluid channel 632 c need notnecessarily extend from the upper surface of the sleeve 632 b (i.e. thesurface near the sharp end of the pin body 632 a) the lower surface ofthe sleeve 632 b (i.e. the surface near the base end of the pin body 632a and a ground electrode). If the ground pin includes a fluid channelthat is capable of providing fluid communication to the fluid region 310and the first cavity 312, the ground pin 632 is within the scope of thepresent disclosure. For example, a portion of the sleeve 632 b, whendisposed on the platen body, may extend above the first via 314 and tothe fluid region 310. In such a ground pin 632, one end of the fluidchannel 632 c may be below the upper surface of the sleeve 632 b.

In the present embodiment, the fluid channel 632 c may have a roundconcave surface. In another embodiment, the sleeve 632 b may have one ormore protrusions that convex outwardly (not shown), away from the centerof the sleeve 632 b. In such an embodiment, one or more fluid channelsmay be adjacent to the protrusions. Yet in another embodiment, the fluidchannel 632 c may have a plurality of flat surfaces.

By providing the fluid channel in communication with the fluid region310 and the first cavity 312, two regions 310 may be in fluidcommunication with one another. Fluid may flow through the fluid channel632 c, and pressure equilibrium between the fluid region 310 and thefirst cavity 312 of the platen may be achieved. Sudden burst of flow offluid between the fluid region 310 and the first cavity 312 may beavoided.

Referring to FIGS. 6B and 6C, there are shown isometric views of twoother exemplary ground pin 635 and 637 according to other embodiments ofthe present disclosure. Each of the ground pins in FIGS. 6B and 6C issimilar to the ground pin described earlier with FIG. 6A. In addition,the ground pins 635 and 637 are similar to one another. Each ground pins635 and 637 comprises a pin body 635 a, a sleeve 635 b and 637 b, and afluid channel 635 c, respectively.

Each of the ground pins 635 and 637, however, has different number offluid channels 635 c and 637 c. For example, the ground pin 635illustrated in FIG. 6B comprises three fluid channels 635 c, and theground pin 637 illustrated in FIG. 6C comprises eight fluid channels 637c. Each of the fluid channels 635 c and 637 c may enable fluid to flowbetween the fluid region 310 and the first cavity such that pressureequilibrium between two regions 310 and 312 may be achieved. Those ofordinary skill in the art will recognize that the number of the fluidchannels is not limited in the present disclosure. The ground pin of thepresent disclosure may comprise a sleeve with any number of fluidchannels.

Referring to FIG. 6D, there is shown a view of another exemplary groundpin 639 according to another embodiment of the present disclosure. Theground pin shown in FIG. 6D is similar to the ground pin describedearlier with FIG. 6A-6C. For example, the ground pin 639 comprises a pinbody 639 a, a sleeve 639 b, and at least one fluid channel 639 c. Thefluid channel 639 c, however, comprises a flat surface. In the presentembodiment, the sleeve may have portions with cross sectional dimensionthat is greater than the cross sectional dimension of the first via 314.

With the ground pin 630 of the present embodiment, pressure equilibriumbetween the fluid region 310 and the first cavity 312 may be achievedeven when the sleeve contacts the platen body (see FIG. 5). In addition,sudden bursts of fluid flow between the fluid region 310 and the firstcavity 312, which may disturb and distribute the debris, may be avoided.

Referring to FIGS. 7A and 7B, there are shown another exemplary groundpin 732 according to another embodiment of the present disclosure.Similar to the ground pins of earlier embodiments, the ground pin 732 ofthe present embodiment may also be incorporated into the platenillustrated in FIGS. 3, 4, and 5.

In the present embodiment, the ground pin 732 may comprise a pin body732 a, a sleeve 732 b, and a fluid channel 732 c. In the presentembodiment, the fluid channel 732 c may have a helical shape. AlthoughFIGS. 7A and 7B illustrate a helical fluid channel 732 c with severalwindings, those of ordinary skill in the art will recognize that thehelical fluid channel 732 c may have one or less than one winding. Thefluid channel 732 c may preferably have an opening that is in fluidcommunication with the fluid region 310 and the first cavity 312. In theprocess, pressure equilibrium may be achieved even when the sleevecontacts the platen (see FIG. 5). In addition, sudden bursts of fluidflow between the fluid region 310 and the first cavity 312, which maydisturb and distribute the debris, may be avoided.

Referring to FIG. 8, there is shown another exemplary ground pin 832according to another embodiment of the present disclosure. Similar tothe ground pins of other embodiments, the ground pin 832 of the presentembodiment may also be incorporated into the platen illustrated in FIGS.3, 4, and 5.

The ground pin 832 comprises a ground pin 832 a, a sleeve 832 b, and afluid channel 832 c. The sleeve 832 b may be similar to those describedin earlier embodiments. In the present embodiment, the fluid channel 832c may be provided in the pin body 832 a. Through the fluid channel 832c, fluid may flow between the fluid region 310 and the first cavity 312,and pressure equilibrium between two regions 310 and 312 may beachieved. In addition, sudden bursts of fluid flow between the fluidregion 310 and the first cavity 312, which may be attributable tointermittent separation of the sleeve 732 b and the platen and which maydistribute contaminants to the substrate, may be avoided.

Several embodiments of a platen for reducing particle contamination on asubstrate while processing the substrate and a method thereof aredisclosed. Those of the art will recognize that the present disclosureis not to be limited in scope by the specific embodiments describedherein. Indeed, other various embodiments of and modifications to thepresent disclosure, in addition to those described herein, will beapparent to those of ordinary skill in the art from the foregoingdescription and accompanying drawings. For example, the presentdisclosure may be equally applicable to other types of substratesupport, and components thereof, in system that performs a process otherthan ion implantation. In particular, the present disclosure may also beapplicable to system performing an etch process, deposition process,annealing process, or other optical processes. In addition, the presentdisclosure may be equally applicable to a substrate support having aplurality regions, where one of the regions experience sudden bursts offluid flowing from another, different regions. Thus, such otherembodiments and modifications are intended to fall within the scope ofthe present disclosure. Further, although the present disclosure hasbeen described herein in the context of a particular implementation in aparticular environment for a particular purpose, those of ordinary skillin the art will recognize that its usefulness is not limited thereto andthat the present disclosure may be beneficially implemented in anynumber of environments for any number of purposes. Accordingly, theclaims set forth below should be construed in view of the full breadthand spirit of the present disclosure as described herein.

What is claimed is:
 1. A platen for supporting a substrate duringprocessing of the substrate, the platen comprising: a platen bodycomprising first and second recesses, the first recess defining a fluidregion for holding fluid for maintaining a temperature of the substrateat a desired temperature, the second recess defining a first cavity forholding a ground circuit; a first via defined in the platen body, thefirst via having first and second openings, the first opening proximateto the fluid region and the second opening proximate to the firstcavity, wherein pressure level of the fluid region is maintained at alevel that is substantially equal to pressure level of the first cavity.2. The platen according to claim 1, wherein the fluid region is inpressure equilibrium with the first cavity.
 3. The platen according toclaim 1, wherein the fluid region is in fluid communication with thefirst cavity.
 4. The platen according to claim 3, further comprising: afluid channel, wherein the fluid region is in fluid communication withthe first cavity through a fluid channel.
 5. The platen according toclaim 4, wherein the fluid channel is provided in the platen body. 6.The platen according to claim 4, wherein the fluid channel is providedin the ground circuit.
 7. The platen according to claim 6, wherein theground circuit comprises a ground pin having a pin body and a sleeve,wherein the fluid channel is provided in the sleeve.
 8. The platenaccording to claim 6, wherein the ground circuit comprises a ground pinhaving a pin body and a sleeve, wherein the fluid channel is provided inthe pin body.
 9. The platen according to claim 6, wherein the groundcircuit comprises a ground pin having a pin body and a sleeve, whereinthe sleeve is porous and the fluid channel is provided in the poroussleeve.
 10. The platen according to claim 7, wherein the fluid channelis in a form of a groove.
 11. The platen according to claim 6, whereinthe ground circuit comprises a ground pin having a pin body and asleeve, wherein the fluid channel is in a form of a groove, and whereinthe groove is provided in the sleeve.
 12. The platen according to claim11, wherein the groove extends in one direction.
 13. The platenaccording to claim 11, wherein the groove is a helical groove.